The direct influence of polarity on structural and electro-optical properties of heteroepitaxial GaN
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/14/i=48/a=387/pdf
Reference20 articles.
1. Polarity of (00.1) GaN epilayers grown on a (00.1) sapphire
2. Polarity determination for GaN films grown on (0001) sapphire and high-pressure-grown GaN single crystals
3. Determination of wurtzite GaN lattice polarity based on surface reconstruction
4. Reconstructions of theGaN(0001¯)Surface
5. Stability of N- and Ga-polarity GaN surfaces during the growth interruption studied by reflection high-energy electron diffraction
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3. Photo-etching of HVPE-grown GaN: Revealing extended non-homogeneities induced by periodic carrier gas exchange;Journal of Crystal Growth;2014-10
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