Nitrogen-rich growth for device quality N-polar InGaN/GaN quantum wells by plasma-assisted MBE-Reference-Cited by-同舟云学术

Nitrogen-rich growth for device quality N-polar InGaN/GaN quantum wells by plasma-assisted MBE

Published:2019-04 Issue: Volume:512 Page:208-212
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Turski Henryk^ORCID,Feduniewicz-Żmuda Anna,Sawicka Marta,Reszka Anna,Kowalski Bogdan,Kryśko Marcin,Wolny Paweł,Smalc-Koziorowska Julita,Siekacz Marcin,Muzioł Grzegorz,Nowakowski-Szukudlarek Krzesimir,Grzanka Szymon,Skierbiszewski Czeslaw

Funder

Polish National Centre for Research and Development

Foundation for Polish Science

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference28 articles.

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2. Polarization-engineering in group III-nitride heterostructures: New opportunities for device design

3. N-Polar III–Nitride Green (540 nm) Light Emitting Diode

4. N-polar GaN∕AlGaN∕GaN high electron mobility transistors

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