Smooth and selective photo-electrochemical etching of heavily doped GaN:Si using a mode-locked 355 nm microchip laser-Reference-Cited by-同舟云学术

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Smooth and selective photo-electrochemical etching of heavily doped GaN:Si using a mode-locked 355 nm microchip laser

Published:2016-12-08 Issue:1 Volume:10 Page:011001
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Lee SeungGeun,Mishkat-Ul-Masabih Saadat,Leonard John T.,Feezell Daniel F.,Cohen Daniel A.,Speck James S.,Nakamura Shuji,DenBaars Steven P.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/10/i=1/a=011001/pdf

Reference18 articles.

1. Cl[sub 2] reactive ion etching for gate recessing of AlGaN/GaN field-effect transistors

2. Demonstration of Nonpolar GaN-Based Vertical-Cavity Surface-Emitting Lasers

3. Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching

4. Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture

5. Thermally-activated degradation of InGaN-based laser diodes: Effect on threshold current and forward voltage

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4. Fabrication of GaN nanowires containing n+-doped top layer by wet processes using electrodeless photo-assisted electrochemical etching and alkaline solution treatment;Applied Physics Express;2021-10-29

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