Gain, differential gain and linewidth enhancement factor of GaInNAs/GaAs strained quantum well lasers
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Reference34 articles.
1. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
2. 1.3-μm continuous-wave lasing operation in GaInNAs quantum-well lasers
3. 1.3 [micro sign]m continuous-wave operation of GainNAs lasers grown by metal organic chemical vapour deposition
4. Reduced threshold current densities of (GaIn)(NAs)/GaAs single quantum well lasers for emission wavelengths in the range 1.28 – 1.38 [micro sign]m
5. Low threshold, high reliability 1.3 [micro sign]m PACIS (p-substrate Al-oxide confined inner stripe) lasers and application to laser arrays
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1. Theoretical studies on band structure and optical gain of GaInAsN/GaAs /GaAs cylindrical quantum dot;Superlattices and Microstructures;2018-07
2. Optical gain spectra of 1.55 μm GaAs/GaN.58yAs1-1.58yBiy/GaAs single quantum well;Superlattices and Microstructures;2017-02
3. Band structure and the optical gain of GaInNAs/GaAs quantum wells modeled within 10-band and 8-band kp model;Journal of Applied Physics;2013-02-14
4. OPTICAL INTERSUBBAND TRANSITIONS AND BINDING ENERGIES OF DONOR IMPURITIES IN Ga1-xInxNyAs1-y/GaAs/Al0.3Ga0.7As QUANTUM WELL UNDER THE ELECTRIC FIELD;International Journal of Modern Physics B;2012-03-10
5. The optical gain and radiative current density of GaInNAs/GaAs/AlGaAs separate confinement heterostructure quantum well lasers;Journal of Applied Physics;2010-01
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