Optical gain spectra of 1.55 μm GaAs/GaN.58yAs1-1.58yBiy/GaAs single quantum well-Reference-Cited by-同舟云学术

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Optical gain spectra of 1.55 μm GaAs/GaN.58yAs1-1.58yBiy/GaAs single quantum well

Published:2017-02 Issue: Volume:102 Page:141-146
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Guizani I.,Bilel C.,Habchi M.M.,Rebey A.

Funder

“Direction Générale de la Recherche Scientifique et de la Technologie” (DGRST), Tunisia

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference35 articles.

1. Characteristics of Semiconductor Alloy GaAs1-xBix

2. Domains of molecular beam epitaxial growth of Ga(In)AsBi on GaAs and InP substrates

3. Photoreflectance and photoluminescence study of annealing effects on GaAsBi layers grown by metalorganic vapor phase epitaxy

4. Similar and dissimilar aspects ofIII−Vsemiconductors containingBiversusN

5. Giant Spin-Orbit Bowing inGaAs1−xBix

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1. Performance optimization of AlGaAs/GaAsBiN resonant tunneling diode;Optik;2022-10

2. Tunneling in matched AlGaAs/GaAsBiN superlattices;Applied Physics A;2022-04-19

3. Optical Investigation of p-GaAs/i-GaN0.38yAs1-1.38ySby/n-GaAs Quantum Wells Emitters;Journal of Nanotechnology;2022-04-13

4. Theoretical investigation of interband absorption coefficient and physical properties of GaAsNBi alloy with lattice-matched to GaAs;Materials Today: Proceedings;2021

5. The investigation of hydrostatic pressure dependent optoelectronic properties of GaAsNBi spherical quantum dot;Materials Science in Semiconductor Processing;2020-04

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