Domains of molecular beam epitaxial growth of Ga(In)AsBi on GaAs and InP substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference28 articles.
1. Molecular beam epitaxy growth of GaAs1−xBix
2. New Semiconductor Alloy GaAs1-xBix Grown by Metal Organic Vapor Phase Epitaxy
3. GaBiAs: A material for optoelectronic terahertz devices
4. Band gap of GaAs1−xBix, 0
5. Composition dependence of photoluminescence of GaAs1−xBix alloys
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