OPTICAL INTERSUBBAND TRANSITIONS AND BINDING ENERGIES OF DONOR IMPURITIES IN Ga1-xInxNyAs1-y/GaAs/Al0.3Ga0.7As QUANTUM WELL UNDER THE ELECTRIC FIELD-Reference-Cited by-同舟云学术

OPTICAL INTERSUBBAND TRANSITIONS AND BINDING ENERGIES OF DONOR IMPURITIES IN Ga1-xInxNyAs1-y/GaAs/Al0.3Ga0.7As QUANTUM WELL UNDER THE ELECTRIC FIELD

Published:2012-03-10 Issue:06 Volume:26 Page:1250013
ISSN:0217-9792
Container-title:International Journal of Modern Physics B
language:en
Short-container-title:Int. J. Mod. Phys. B

Author:

UNGAN F.¹,YESILGUL U.¹,KASAPOGLU E.¹,SARI H.¹,SOKMEN I.²

Affiliation:

1. Cumhuriyet University, Physics Department, 58140 Sivas, Turkey

2. Dokuz Eylül University, Physics Department, 35160 Buca, İzmir, Turkey

Abstract

The effects of nitrogen and indium mole concentration on the intersubband optical absorption for (1–2) transition and the binding energy of the shallow-donor impurities in a Ga 1-x In x N y As 1-y/ GaAs / Al 0.3 Ga 0.7 As quantum well under the electric field is theoretically calculated within the framework of the effective-mass approximation. Results are obtained for several concentrations of nitrogen and indium, and the applied electric field. The numerical results show that the intersubband transitions and the impurity binding energy strongly depend on the nitrogen and indium concentrations.

Publisher

World Scientific Pub Co Pte Lt

Subject

Condensed Matter Physics,Statistical and Nonlinear Physics

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0217979212500130

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