Thermal stability of defects in p-type as-grown 6H-SiC
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/19/i=30/a=306204/pdf
Reference18 articles.
1. Ab initiostudy of the annealing of vacancies and interstitials in cubic SiC: Vacancy-interstitial recombination and aggregation of carbon interstitials
2. Electrical characterization of metastable carbon clusters inSiC: A theoretical study
3. Investigation of deep levels in n-type 4H-SiC epilayers irradiated with low-energy electrons
4. Deep levels created by low energy electron irradiation in 4H-SiC
5. Annealing behavior between room temperature and 2000 °C of deep level defects in electron-irradiated n-type 4H silicon carbide
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1. The effects of different anode manufacturing methods on deep levels in 4H-SiC p+n diodes;Journal of Applied Physics;2024-06-17
2. Electrically Active Defects in Electron Irradiated P-Type 6H-SiC;Materials Science Forum;2011-03
3. The effects of displacement threshold irradiation energy on deep levels in p-type 6H-SiC;Journal of Physics: Condensed Matter;2011-01-27
4. Effect of annealing treatment on the 386 nm and 388 nm emission peaks in unintentionally doped 4H-SiC epilayer;Acta Physica Sinica;2011
5. Deep levels affecting the resistivity in semi-insulating 6H–SiC;Journal of Applied Physics;2010-09
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