Structure and energetics changes during hydrogenation of 4H-SiC{0001} surfaces: a DFT study
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Reference26 articles.
1. Electronic properties of SiC surfaces and interfaces: some fundamental and technological aspects
2. Polarization properties of(11¯00)and(112¯0)SiC surfaces from first principles
3. Passivation of hexagonal SiC surfaces by hydrogen termination
4. Hydrogen terminated4H−SiC(11¯00)and(112¯0)surfaces studied by synchrotron x-ray photoelectron spectroscopy
5. Enhanced hydrogen bonding strength observed in hydrogenated SiC and SiO2∕SiC structures
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1. Atomistic Study of the Bandgap Engineering of Two-Dimensional Silicon Carbide by Hydrogenation;ACS Omega;2023-07-09
2. Structure and electron affinity of the 4H–SiC (0001) surfaces: a methodological approach for polar systems;Journal of Physics: Condensed Matter;2021-04-20
3. Growth Mechanism of SiC CVD: Surface Etching by H2, H Atoms, and HCl;The Journal of Physical Chemistry A;2018-02-07
4. Hydrogen generation due to water splitting on Si - terminated 4H-Sic(0001) surfaces;Surface Science;2018-02
5. Passivation of Surface Recombination at the Si-Face of 4H-SiC by Acidic Solutions;ECS Journal of Solid State Science and Technology;2018
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