Atomistic Study of the Bandgap Engineering of Two-Dimensional Silicon Carbide by Hydrogenation-Reference-Cited by-同舟云学术

Atomistic Study of the Bandgap Engineering of Two-Dimensional Silicon Carbide by Hydrogenation

Published:2023-07-09 Issue:28 Volume:8 Page:25424-25431
ISSN:2470-1343
Container-title:ACS Omega
language:en
Short-container-title:ACS Omega

Author:

Thu Tran Hanh Thi¹²^ORCID,Nguyen Phi Minh¹²,Van Nguyen Hoa¹²,Chong Tet Vui³,Bubanja Vladimir⁴⁵,Van Vo Hoang¹²

Affiliation:

1. Laboratory of Computational Physics, Faculty of Applied Science, Ho Chi Minh City University of Technology (HCMUT), 268 Ly Thuong Kiet Street, District 10, Ho Chi Minh City 70000, Vietnam

2. Vietnam National University Ho Chi Minh City, Linh Trung Ward, Thu Duc District, Ho Chi Minh City 70000, Vietnam

3. Faculty of Engineering and Quantity Surveying, INTI International University, Persiaran Perdana BBN, Putra Nilai, Nilai 71800, Negeri Sembilan, Malaysia

4. Measurement Standards Laboratory of New Zealand, Callaghan Innovation, Lower Hutt, P.O. Box 31310, Wellington 5040, New Zealand

5. The Dodd-Walls Centre for Photonic and Quantum Technologies, University of Otago, 730 Cumberland Street, Dunedin 9016, New Zealand

Funder

Viet Nam National University Ho Chi Minh City (VNU-HCM)

Publisher

American Chemical Society (ACS)

Subject

General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acsomega.3c02914

Reference50 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Unconventional superconductivity in magic-angle graphene superlattices

3. Electric field–tunable superconductivity in alternating-twist magic-angle trilayer graphene

4. Monolayer honeycomb structures of group-IV elements and III-V binary compounds: First-principles calculations

5. Strong second harmonic generation in SiC, ZnO, GaN two-dimensional hexagonal crystals from first-principles many-body calculations

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