Surface annealing of gallium arsenide studied with low-energy positrons
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/4/i=7/a=024/pdf
Reference20 articles.
1. The study of sub-surface and interface characteristics of semiconductor heterostructures by slow positron implantation spectroscopy
2. Design of a low energy positron beam
3. Epithermal effects in positron depth profiling measurements
4. Properties of vacancy defects in GaAs single crystals
5. Ga Antisite Defects in Neutron Irradiated and Annealed GaAs?
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Saturated electric field effect at semi-insulating GaAs-metal junctions studied with a low energy positron beam;Journal of Applied Physics;1997-10-15
2. Shift of surface Fermi level position toward the conduction band minimum by crystal defects near GaAs(001) surface;Journal of Applied Physics;1997-08-15
3. Relaxation of band bending on GaAs(001) surface by controlling the crystal defects near the surface;Applied Surface Science;1997-06
4. Thermal effects on surface Fermi level for GaAs(001);Journal of Applied Physics;1996-05-15
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