The study of sub-surface and interface characteristics of semiconductor heterostructures by slow positron implantation spectroscopy-Reference-Cited by-同舟云学术

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The study of sub-surface and interface characteristics of semiconductor heterostructures by slow positron implantation spectroscopy

Published:1989-10-01 Issue:SB Volume:1 Page:SB39-SB44
ISSN:0953-8984
Container-title:Journal of Physics: Condensed Matter
language:
Short-container-title:J. Phys.: Condens. Matter

Author:

Baker J A,Coleman P G

Publisher

IOP Publishing

Subject

Condensed Matter Physics,General Materials Science

Reference13 articles.

1. SiO2/Si interface probed with a variable‐energy positron beam

2. Defects and Impurities at the Si/Si(100) Interface Studied with Monoenergetic Positrons

3. Variable‐energy positron‐beam studies of SiO2/Si irradiated by ionizing radiation

4. Interaction of positron beams with surfaces, thin films, and interfaces

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Near-surface lateral vacancy migration in O+-implanted SiC studied by positron re-emission microscopy;Applied Surface Science;1999-08

2. Positron re-emission microscopy of perfect and -implanted SiC;Journal of Physics: Condensed Matter;1998-11-23

3. Microstructure of the Au/GaAs(110) interface probed using a variable-energy positron beam;Journal of Physics: Condensed Matter;1994-02-07

4. Frequency Dependence of Positron Annihilation Signal from MOS Structure;physica status solidi (b);1993-07-01

5. Positron studies of metal‐oxide‐semiconductor structures;Journal of Applied Physics;1993-03-15

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