Saturated electric field effect at semi-insulating GaAs-metal junctions studied with a low energy positron beam
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.365693
Reference35 articles.
1. Electrostatic and current transport properties ofn+/semi‐insulating GaAs junctions
2. C-V analysis of the Schottky barrier in undoped semi-insulating GaAs
3. Charge transport properties of undoped SI LEC GaAs solid-state detectors
4. Imaging of high field regions in semi-insulating GaAs under bias
5. Evidence for field enhanced electron capture by EL2 centers in semi‐insulating GaAs and the effect on GaAs radiation detectors
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1. Measurement of the shear strain of the Gd2O3/GaAs(001) interface by photoreflectance difference spectroscopy;Applied Physics Letters;2014-11-03
2. Unexpected current lowering by a low work-function metal contact: Mg/SI–GaAs;Solid-State Electronics;2013-04
3. Irradiation effects on the compensation of semi-insulating GaAs for particle detector applications;Journal of Applied Physics;2005-07-15
4. Mott barrier behavior by enhanced donorlike level neutralization in semi-insulating GaAs Schottky diodes;Physical Review B;2004-08
5. A study of the electric field transient at the Au/semi-insulating GaAs contact under an alternating current square-pulse bias;Journal of Physics: Condensed Matter;2002-11-27
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