Measurement of the shear strain of the Gd2O3/GaAs(001) interface by photoreflectance difference spectroscopy
Author:
Affiliation:
1. Instituto de Investigación en Comunicación Óptica, Universidad Autónoma de San Luis Potosí, Alvaro Obregón 64, San Luis Potosí 78000, Mexico
2. Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany
Funder
Consejo Nacional de Ciencia y Tecnología (National Council of Science and Technology, Mexico)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4901168
Reference28 articles.
1. Nanometre-scale electronics with III–V compound semiconductors
2. Strained GaAs nanocrystals for nonvolatile memory applications
3. Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning (Invited Paper)
4. High-κ gate dielectrics: Current status and materials properties considerations
5. Atomic Layer Deposition of Gd2O3 and Dy2O3: A Study of the ALD Characteristics and Structural and Electrical Properties
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2. Experimental demonstration of the strong impact of plasma excitation frequency range on electronic properties of silicon nitride/GaAs interfaces;Surfaces and Interfaces;2023-08
3. Investigation of the interface characteristics of Y2O3/GaAs under biaxial strain, triaxial strain, and non-strain conditions;Journal of Applied Physics;2016-09-14
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