Author:
Caymax Matty,Brammertz Guy,Delabie Annelies,Sioncke Sonja,Lin Dennis,Scarrozza Marco,Pourtois Geoffrey,Wang Wei-E,Meuris Marc,Heyns Marc
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
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5. Submicrometer Inversion-Type Enhancement-Mode InGaAs MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Gate Dielectric
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