Mott barrier behavior by enhanced donorlike level neutralization in semi-insulating GaAs Schottky diodes
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.70.075208/fulltext
Reference22 articles.
1. Evidence for field enhanced electron capture by EL2 centers in semi‐insulating GaAs and the effect on GaAs radiation detectors
2. Electric-field behavior and charge-density distribution in semi-insulating gallium arsenide Schottky diodes
3. Saturated electric field effect at semi-insulating GaAs-metal junctions studied with a low energy positron beam
4. Electric-field distribution in Au–semi-insulating GaAs contact investigated by positron-lifetime technique
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