Thermal effects on surface Fermi level for GaAs(001)
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.362385
Reference30 articles.
1. Geometric ordering, surface chemistry, band bending, and work function at decapped GaAs(100) surfaces
2. Electronic structure and Schottky-barrier formation on GaAs (100) surfaces prepared by thermal desorption of a protective arsenic coating
3. Work function, electron affinity, and band bending at decapped GaAs(100) surfaces
4. Compensating surface defects induced by Si doping of GaAs
5. Tunneling spectroscopy on compensating surface defects induced by Si doping of molecular-beam epitaxially grown GaAs(001)
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Characterization of Pure Water-Treated GaAs Surfaces by Measuring Contact Angles of Water Droplets;Journal of The Electrochemical Society;2001
2. Characterization of an n-GaAs layer grown on a GaAs substrate cleaned by an electron cyclotron resonance hydrogen plasma;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1998-01
3. Shift of surface Fermi level position toward the conduction band minimum by crystal defects near GaAs(001) surface;Journal of Applied Physics;1997-08-15
4. Relaxation of band bending on GaAs(001) surface by controlling the crystal defects near the surface;Applied Surface Science;1997-06
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