Structural characterization of 6H- and 4H-SiC polytypes by means of cathodoluminescence and x-ray topography
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/16/i=2/a=013/pdf
Reference11 articles.
1. Luminescence from stacking faults in 4H SiC
2. Behavior of background impurities in thick 4H–SiC epitaxial layers
3. High channel mobility in inversion layers of 4H-SiC MOSFETs by utilizing (112~0) face
4. Preservation of polytypic structure in implanted 4H-SiC(100)
5. Luminescence properties of transition-metal-doped GaSb
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1. Three-Dimensional (3D) Nondestructive Characterization of the Spatial Distribution and Complex Properties of Polytypes on 4H-SiC Wafers;ACS Applied Electronic Materials;2024-09-12
2. Defects distribution and evolution in selected-area helium ion implanted 4H–SiC;Ceramics International;2024-03
3. Cathodoluminescence Characterization of Point Defects Generated through Ion Implantations in 4H-SiC;Coatings;2023-05-26
4. Radioluminescence characterization of SiC and SiC/SiC for 1.8MeV electron irradiation;Journal of Nuclear Materials;2013-11
5. Investigation of luminescence properties of basal plane dislocations in 4H-SiC;Acta Physica Sinica;2011
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