Behavior of background impurities in thick 4H–SiC epitaxial layers-Reference-Cited by-同舟云学术

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Behavior of background impurities in thick 4H–SiC epitaxial layers

Published:2001-12 Issue:1-4 Volume:184 Page:242-246
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Kakanakova-Georgieva A.,Yakimova R.,Syväjärvi M.,Janzén E.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference9 articles.

1. A.O. Konstantinov, in: G.L. Harris (Ed.), Properties of SiC, INSPEC, The Institution of Electrical Engineers, London, 1995, 170 pp.

2. Mitsui Engineering and Shipbuilding Co., Ltd.

3. Very slow decays of the luminescence from Boron-doped 4H-SiC

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. On the origin of aluminum-related cathodoluminescence emissions from sublimation grown 4H-SiC();Applied Surface Science;2009-04

2. Sublimation growth of an in-situ-deposited layer in SiC chemical vapor deposition on 4H-SiC(112¯0);Journal of Crystal Growth;2008-12

3. Polytype Stability and Microstructural Characterization of Silicon Carbide Epitaxial Films Grown on [ $$ {\hbox{11}}\overline{{\hbox{2}}} {\hbox{0}} $$ ]- and [0001]-Oriented Silicon Carbide Substrates;Journal of Electronic Materials;2007-03-16

4. Structural characterization of 6H- and 4H-SiC polytypes by means of cathodoluminescence and x-ray topography;Journal of Physics: Condensed Matter;2003-12-22

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