Photoionization spectroscopy of deep defects responsible for current collapse in nitride-based field effect transistors
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/15/i=44/a=R01/pdf
Reference56 articles.
1. Trapping effects in GaN and SiC microwave FETs
2. Large signal frequency dispersion of AlGaN/GaN heterostructure field effect transistors
3. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
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