Top-Gated Organic Synaptic Transistor With PS/PVA Hybrid as Trapping Layer for Excitatory Behavior Modulation-Reference-Cited by-同舟云学术

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Top-Gated Organic Synaptic Transistor With PS/PVA Hybrid as Trapping Layer for Excitatory Behavior Modulation

Published:2023-08 Issue:8 Volume:44 Page:1308-1311
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Zou Jianxiong¹^ORCID,Zhang Qia¹,Ai Jin¹,Kang Ling¹,Deng Menghan¹^ORCID,Zhang Jinzhong¹^ORCID,Li Wenwu²^ORCID,Jian Jian Zhang¹^ORCID

Affiliation:

1. Engineering Research Center of Nanophotonics and Advanced Instrument (MOE), Shanghai Key Laboratory of Multidimensional Information Processing, East China Normal University, Shanghai, China

2. Department of Materials Science, Institute of Optoelectronics, Fudan University, Shanghai, China

Funder

Science and Technology Commission of Shanghai Municipality

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/10199118/10168964.pdf?arnumber=10168964

Reference35 articles.

1. Ultralow-Power Synaptic Transistor Based on Wafer-Scale MoS2 Thin Film for Neuromorphic Application

2. Short-term plasticity and long-term potentiation mimicked in single inorganic synapses

3. Memristors based on multilayer graphene electrodes for implementing a low-power neuromorphic electronic synapse

4. Short-Term Synaptic Plasticity

5. Nanoionics-Based Three-Terminal Synaptic Device Using Zinc Oxide

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