Oxygen-related radiation-induced defects in SiGe alloys
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/15/i=39/a=008/pdf
Reference36 articles.
1. Defects in Irradiated Silicon. I. Electron Spin Resonance of the Si-ACenter
2. Defects in Irradiated Silicon. II. Infrared Absorption of the Si-ACenter
3. Identification of an interstitial carbon‐interstitial oxygen complex in silicon
4. Oxygen and dioxygen centers in Si and Ge: Density-functional calculations
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1. 5.5 MeV Electron Irradiation-Induced Transformation of Minority Carrier Traps in p-Type Si and Si1−xGex Alloys;Materials;2022-03-02
2. Study of Radiation-Induced Defects in p-Type Si1−xGex Diodes before and after Annealing;Materials;2020-12-12
3. Transient Electrical and Optical Characteristics of Electron and Proton Irradiated SiGe Detectors;Sensors;2020-12-02
4. Vacancy-oxygen defects in p-type Si1−xGex;Journal of Applied Physics;2014-10-07
5. Radiation effects in Si-Ge quantum size structure (Review);Semiconductors;2013-02
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