Atomic-step rearrangement on Si(100) by interaction with antimony
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Reference19 articles.
1. Strain relief by microroughness in surfactant-mediated growth of Ge on Si(001)
2. Influence of surfactants in Ge and Si epitaxy on Si(001)
3. Formation of step structures by As deposition on a double-domain Si(001) substrate
4. Atomic-step rearrangement on Si(100) by interaction with arsenic and the implication for GaAs-on-Si epitaxy
5. Adsorption of As on stepped Si(100): Resolution of the sublattice-orientation dilemma
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1. Switching of the Dimer-Row direction through Sb-passivation on the vicinal Si(001)-4° off surface of a single domain;Journal of Applied Science and Engineering A;2021-12-01
2. Stress-driven structural transformation of Sb-passivated Si(114);Surface Science;2012-02
3. Modification of Sb/Si(001) interface by incorporation of In(4 x 3) surface reconstruction;APPL SURF SCI;2004
4. Ab initio study of the one-monolayer Sb/Si(001) interface;Surface Science;2003-06
5. Sb-induced(1×1)reconstruction on Si(001);Physical Review B;2003-03-17
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