Adsorption of As on stepped Si(100): Resolution of the sublattice-orientation dilemma
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.44.6534/fulltext
Reference28 articles.
1. Multilayer step formation after As adsorption on Si (100): Nucleation of GaAs on vicinal Si
2. Arsenic-terminated silicon and germanium surfaces studied by scanning tunnelling microscopy
3. Arsenic‐induced step rearrangements on vicinal Si (111) substrates
4. Step structure and interface morphology: Arsenic on vicinal silicon surfaces
5. Atomic-step rearrangement on Si(100) by interaction with arsenic and the implication for GaAs-on-Si epitaxy
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