Modelling of oxygen vacancy aggregates in monoclinic HfO2: can they contribute to conductive filament formation?-Reference-Cited by-同舟云学术

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Modelling of oxygen vacancy aggregates in monoclinic HfO2: can they contribute to conductive filament formation?

Published:2015-09-23 Issue:41 Volume:27 Page:415401
ISSN:0953-8984
Container-title:Journal of Physics: Condensed Matter
language:
Short-container-title:J. Phys.: Condens. Matter

Author:

Bradley Samuel R,Bersuker Gennadi,Shluger Alexander L

Funder

Engineering and Physical Sciences Research Council

European Cooperation in Science and Technology

Publisher

IOP Publishing

Subject

Condensed Matter Physics,General Materials Science

Link

http://stacks.iop.org/0953-8984/27/i=41/a=415401/pdf

Reference47 articles.

1. Recent advances and current challenges in the search for high mobility band-edge high-k/metal gate stacks

2. Oxygen vacancy induced charge trapping and positive bias temperature instability in HfO2nMOSFET

3. Charge-transition levels of oxygen vacancy as the origin of device instability in HfO2 gate stacks through quasiparticle energy calculations

4. Impact of the crystallization of the high-k dielectric gate oxide on the positive bias temperature instability of the n-channel metal-oxide-semiconductor field emission transistor

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