The temperature dependence of monolayer oxidation on Si(001)-(2 × 1) studied with surface differential reflectance spectroscopy
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/19/i=44/a=446011/pdf
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1. Real-Time Analysis of Initial Oxidation Process on Si(001) by Means of Surface Differential Reflectance Spectroscopy and Reflectance Difference Spectroscopy;Springer Series in Optical Sciences;2013-12-05
2. Oxynitride Formation Processes on Si(001) Studied by Means of Reflectance Difference Spectroscopy;Japanese Journal of Applied Physics;2013-12-01
3. Time-evolution of thermal oxidation on high-index silicon surfaces: Real-time photoemission spectroscopic study with synchrotron radiation;Surface Science;2012-11
4. Reactive molecular dynamics simulation of early stage of dry oxidation of Si (100) surface;Journal of Applied Physics;2011-09
5. Thermally processed titanium oxides film on Si(001) surface studied with scanning tunneling microscopy/spectroscopy;Applied Surface Science;2010-12
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