Vacancy-donor complexes in highlyn-type Ge doped with As, P and Sb
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/28/i=33/a=335801/pdf
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1. Germanium: From its discovery to SiGe devices
2. SiGe-channel heterojunction p-MOSFET's
3. A Logic Nanotechnology Featuring Strained-Silicon
4. High-mobility Si and Ge structures
5. Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors
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