Real-time coverage monitoring of initial oxidation processes on Si(001) by means of surface differential reflectance
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/18/i=17/a=L01/pdf
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1. Early oxidation stages of the strained Ge/Si(105) surface: A reflectance anisotropy spectroscopy study;physica status solidi (b);2014-04-28
2. Real-Time Analysis of Initial Oxidation Process on Si(001) by Means of Surface Differential Reflectance Spectroscopy and Reflectance Difference Spectroscopy;Springer Series in Optical Sciences;2013-12-05
3. Oxynitride Formation Processes on Si(001) Studied by Means of Reflectance Difference Spectroscopy;Japanese Journal of Applied Physics;2013-12-01
4. First stages of silicon oxidation with the activation relaxation technique;Physical Review B;2012-08-02
5. Bond-specific reaction kinetics during the oxidation of (111) Si: Effect of n-type doping;Applied Physics Letters;2011-01-10
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