Bias stress and humidity exposure of amorphous InGaZnO thin-film transistors with atomic layer deposited Al2O3 passivation using dimethylaluminum hydride at 200 °C-Reference-Cited by-同舟云学术

Bias stress and humidity exposure of amorphous InGaZnO thin-film transistors with atomic layer deposited Al2O3 passivation using dimethylaluminum hydride at 200 °C

Published:2020-02-13 Issue:16 Volume:53 Page:165103
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Corsino Dianne C,Bermundo Juan Paolo S^ORCID,Fujii Mami N^ORCID,Takahashi Kiyoshi,Ishikawa Yasuaki^ORCID,Uraoka Yukiharu

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1088/1361-6463/ab6e97/pdf

Reference37 articles.

1. Role of Ga2O3–In2O3–ZnO channel composition on the electrical performance of thin-film transistors

2. Electronic Defects in Amorphous Oxide Semiconductors: A Review

3. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

4. Effects of ambient atmosphere on the transfer characteristics and gate-bias stress stability of amorphous indium-gallium-zinc oxide thin-film transistors

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