Low-k protection from F radicals and VUV photons using a multilayer pore grafting approach-Reference-Cited by-同舟云学术

Low-k protection from F radicals and VUV photons using a multilayer pore grafting approach

Published:2018-07-19 Issue:32 Volume:51 Page:325202
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Zotovich A^ORCID,Rezvanov A^ORCID,Chanson R,Zhang L,Hacker N,Kurchikov K,Klimin S,Zyryanov S M^ORCID,Lopaev D,Gornev E,Clemente I,Miakonkikh A,Maslakov K

Funder

Russian Science Foundation

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://iopscience.iop.org/article/10.1088/1361-6463/aad06d/pdf

Reference36 articles.

1. Low dielectric constant materials for microelectronics

2. Dielectric Films for Advanced Microelectronics

3. Plasma etching: Yesterday, today, and tomorrow

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