Current crowding and self-heating effects in AlGaN-based flip-chip deep-ultraviolet light-emitting diodes
Author:
Funder
PRESTO program
A-STEP program
Publisher
IOP Publishing
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://iopscience.iop.org/article/10.1088/1361-6463/aa9e0e/pdf
Reference24 articles.
1. Ultraviolet light-emitting diodes based on group three nitrides
2. Advances in group III-nitride-based deep UV light-emitting diode technology
3. High power AlGaN ultraviolet light emitters
4. 270 nm Pseudomorphic Ultraviolet Light-Emitting Diodes with Over 60 mW Continuous Wave Output Power
5. Light extraction enhancement of 265 nm deep-ultraviolet light-emitting diodes with over 90 mW output power via an AlN hybrid nanostructure
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