Investigation of β-Ga2O3-based HEMTs using 2D Simulations for low noise amplification and RF applications
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Published:2021-09-01
Issue:3
Volume:3
Page:035042
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ISSN:2631-8695
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Container-title:Engineering Research Express
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language:
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Short-container-title:Eng. Res. Express
Author:
Singh R,
Lenka T RORCID,
Panda D K,
Nguyen H P T
Subject
General Engineering
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