On the exciton-assisted radiative recombination via impurity trap levels in AlGaN deep ultraviolet light-emitting diodes-Reference-Cited by-同舟云学术

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On the exciton-assisted radiative recombination via impurity trap levels in AlGaN deep ultraviolet light-emitting diodes

Published:2021-06-25 Issue:37 Volume:32 Page:375204
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Chen Huashan,Zhao Zijun,Lin Yue^ORCID,Zhu Lihong,Ma En,Guo Weijie,Wu Tingzhu,Lin Fulin,Lu Yijun,Chen Zhong,Shih TienMo,Lei Yuanchao,Pan Anyu

Funder

The Natural Science Foundation of Fujian Province

The Science and Technology Project of Fujian Province

National Natural Science Foundation of China

The Fundamental 200 Research Funds for the Central Universities

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

https://iopscience.iop.org/article/10.1088/1361-6528/ac0930/pdf

Reference40 articles.

1. The emergence and prospects of deep-ultraviolet light-emitting diode technologies;Kneissl;Nat. Photon.,2019

2. Pulsed and continuous light UV LED: microbial inactivation, electrical, and time efficiency;Sholtes;Water Res.,2019

3. Deep-ultraviolet integrated photonic and optoelectronic devices: a prospect of the hybridization of group III-nitrides, III-oxides, and two dimensional materials;Alfaraj;J. Semicond.,2019

4. Fundamental limitations of wide-bandgap semiconductors for light-emitting diodes;Park;ACS Energy Lett.,2018

5. Analysis of efficiency droop in 280- nm AlGaN multiple-quantum-well light-emitting diodes based on carrier rate equation;Yun;Appl. Phys. Express,2015

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Examining Degradation Mechanisms in Strain-Relaxed AlGaN-Based UV-C Light-Emitting Diodes Using Raman Spectroscopy;IEEE Electron Device Letters;2024-09

2. Investigation on external quantum efficiency droops and inactivation efficiencies of AlGaN-based ultraviolet-c LEDs at 265–285 nm;Nanotechnology;2023-06-01

3. Thermal behavior of AlGaN-based deep-UV LEDs;Optics Express;2022-04-29

4. Enhanced external quantum efficiencies of AlGaN-based deep-UV LEDs using reflective passivation layer;Optics Express;2021-10-29

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