Analysis of efficiency droop in 280-nm AlGaN multiple-quantum-well light-emitting diodes based on carrier rate equation
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/8/i=2/a=022104/pdf
Reference17 articles.
1. 222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire
2. Recombination balance in green-light-emitting GaN/InGaN/AlGaN quantum wells
3. AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%
4. Efficiency droop in 245–247 nm AlGaN light-emitting diodes with continuous wave 2 mW output power
5. Efficiency droop in high-Al-content AlGaN/AlGaN quantum wells
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