Enhanced external quantum efficiencies of AlGaN-based deep-UV LEDs using reflective passivation layer-Reference-Cited by-同舟云学术

Enhanced external quantum efficiencies of AlGaN-based deep-UV LEDs using reflective passivation layer

Published:2021-10-29 Issue:23 Volume:29 Page:37835
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Lin Su-Hui,Tseng Ming-Chun,Peng Kang-Wei,Lai Shouqiang,Shen Meng-Chun,Horng Ray-Hua^ORCID,Lien Shui-Yang,Wuu Dong-Sing^ORCID,Kuo Hao-Chung,Wu Tingzhu^ORCID,Chen Zhong

Funder

National Natural Science Foundation of China

Major Science and Technology Project of Xiamen

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference21 articles.

1. Ultraviolet light-emitting diodes based on group three nitrides

2. Deep-Ultraviolet Light-Emitting Diodes

3. Current crowding in GaN/InGaN light emitting diodes on insulating substrates

4. Self-heating effects at high pump currents in deep ultraviolet light-emitting diodes at 324 nm

5. Perspectives on UVC LED: Its Progress and Application

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