Performance enhancement of charge plasma-based junctionless TFET (JL-TFET) using stimulated n-pocket and heterogeneous gate dielectric
Author:
Publisher
IOP Publishing
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering
Link
https://iopscience.iop.org/article/10.1088/1361-6528/abec07/pdf
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1. Design and investigation of gaussian doped junction free SMDG and TMDG-TFET for analog/RF applications;Engineering Research Express;2024-09-01
2. RF and linearity analysis of gate engineered dual heterojunction charge plasma TFET with improved ambipolarity;Journal of Materials Science: Materials in Electronics;2024-02
3. Improvements in reliability and radio frequency performance of junctionless tunnelling field effect transistor using p+ pocket and metal strip;IET Circuits, Devices & Systems;2023-07
4. Comparative Investigation of Band Gap and Gate Metal Engineered Novel Si0.2Ge0.8/GaAs Charge Plasma-Based JLTFET for Improved Electrical Performance;Silicon;2023-03-11
5. Electrical performance improvement of charge plasma-based junctionless TFET using novel coalescence of SiGe/GaAs and heterogeneous gate dielectric;Applied Physics A;2022-12-11
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