Comparative Investigation of Band Gap and Gate Metal Engineered Novel Si0.2Ge0.8/GaAs Charge Plasma-Based JLTFET for Improved Electrical Performance
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-023-02387-6.pdf
Reference52 articles.
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3. Ionescu AM, Riel H (2011) Tunnel field-effect transistors as energy-efficient electronic switches. Nat 2011 4797373 479:329–337. https://doi.org/10.1038/nature10679
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5. Zhu Z, Svensson J, Jönsson A, Wernersson LE (2022) Performance enhancement of GaSb vertical nanowire p-type MOSFETs on Si by rapid thermal annealing. Nanotechnology 33. https://doi.org/10.1088/1361-6528/ac3689
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