A C–Te-based binary OTS device exhibiting excellent performance and high thermal stability for selector application
Author:
Publisher
IOP Publishing
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering
Link
http://iopscience.iop.org/article/10.1088/1361-6528/aac9f5/pdf
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1. Write Strategies for 2 and 4-bit Multi-Level Phase-Change Memory
2. Te-based amorphous binary OTS device with excellent selector characteristics for x-point memory applications
3. Sub-30nm scaling and high-speed operation of fully-confined Access-Devices for 3D crosspoint memory based on mixed-ionic-electronic-conduction (MIEC) materials
4. An 8 Mb Multi-Layered Cross-Point ReRAM Macro With 443 MB/s Write Throughput
5. Communication—Reduced Off-Current of NbO2by Thermal Oxidation of Polycrystalline Nb Wire
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