Communication—Reduced Off-Current of NbO2by Thermal Oxidation of Polycrystalline Nb Wire-Reference-Cited by-同舟云学术

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Communication—Reduced Off-Current of NbO2by Thermal Oxidation of Polycrystalline Nb Wire

Published:2017 Issue:9 Volume:6 Page:P641-P643
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Chekol Solomon Amsalu,Song Jeonghwan,Park Jaehyuk,Cha Euijun,Lim Seokjae,Hwang Hyunsang

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Metal–Oxide RRAM

2. Complementary resistive switches for passive nanocrossbar memories

3. Access devices for 3D crosspoint memory

4. Grain boundary mediated leakage current in polycrystalline HfO2 films

5. Correlation between the nanoscale electrical and morphological properties of crystallized hafnium oxide-based metal oxide semiconductor structures

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1. Volatile threshold switching devices for hardware security primitives: Exploiting intrinsic variability as an entropy source;Applied Physics Reviews;2024-05-23

2. Enhancement of NbO₂-based oscillator neuron device performance via cryogenic operation;Nanotechnology;2023-12-27

3. NbO2 selector device with Ge2Sb2Te5 thermal barrier for low off current (300 nA) and low power operation;Applied Physics Letters;2023-03-13

4. Effect of oxygen stoichiometry on the threshold switching of RF-sputtered NbOx (x = 2.0–2.5) films;Materials Research Bulletin;2021-12

5. Understanding of the Abrupt Resistive Transition in Different Types of Threshold Switching Devices From Materials Perspective;IEEE Transactions on Electron Devices;2020-07

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