The role of arsenic in the operation of sulfur-based electrical threshold switches

Author:

Wu Renjie,Gu Rongchuan,Gotoh TamihiroORCID,Zhao Zihao,Sun Yuting,Jia Shujing,Miao XiangshuiORCID,Elliott Stephen R.,Zhu MinORCID,Xu MingORCID,Song ZhitangORCID

Abstract

AbstractArsenic is an essential dopant in conventional silicon-based semiconductors and emerging phase-change memory (PCM), yet the detailed functional mechanism is still lacking in the latter. Here, we fabricate chalcogenide-based ovonic threshold switching (OTS) selectors, which are key units for suppressing sneak currents in 3D PCM arrays, with various As concentrations. We discovered that incorporation of As into GeS brings >100 °C increase in crystallization temperature, remarkably improving the switching repeatability and prolonging the device lifetime. These benefits arise from strengthened As-S bonds and sluggish atomic migration after As incorporation, which reduces the leakage current by more than an order of magnitude and significantly suppresses the operational voltage drift, ultimately enabling a back-end-of-line-compatible OTS selector with >12 MA/cm2 on-current, ~10 ns speed, and a lifetime approaching 1010 cycles after 450 °C annealing. These findings allow the precise performance control of GeSAs-based OTS materials for high-density 3D PCM applications.

Funder

National Outstanding Youth Foundation of China

MEXT | JST | Strategic Promotion of Innovative R and D

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy,General Biochemistry, Genetics and Molecular Biology,General Chemistry,Multidisciplinary

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