Feedback and tunneling operations of a p +-i-n + silicon nanowire field-effect transistor
Author:
Publisher
IOP Publishing
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering
Link
http://iopscience.iop.org/article/10.1088/1361-6528/aad9df/pdf
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1. Gate-bias stability of triple-gated feedback field-effect transistors with silicon nanosheet channels;Nanotechnology;2024-04-23
2. Reconfigurable Logic‐In‐Memory Cell Comprising Triple‐Gated Feedback Field‐Effect Transistors;Advanced Electronic Materials;2023-10-08
3. Investigation of switching and inverter characteristics of Recessed-Source/Drain (Re–S/D) Silicon-on-Insulator (SOI) Feedback Field Effect Transistor (FBFET);Microelectronics Journal;2023-08
4. Understanding of carriers’ kinetic energy in steep-slope P+N+P+N+ feedback field effect transistor;Semiconductor Science and Technology;2022-09-07
5. Reliability improvement of 1T DRAM based on feedback transistor by using local partial insulators;Japanese Journal of Applied Physics;2021-10-01
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