Reliability improvement of 1T DRAM based on feedback transistor by using local partial insulators-Reference-Cited by-同舟云学术

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Reliability improvement of 1T DRAM based on feedback transistor by using local partial insulators

Published:2021-10-01 Issue:10 Volume:60 Page:104002
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Nguyen Quan The,Jang Deokjin,Ansari Md. Hasan Raza^ORCID,Kim Garam,Cho Seongjae^ORCID,Cho Il Hwan

Funder

2019 Research Fund of Myongji University

Ministry of Trade, Industry and Economy of Korea (MOTIE) with the Korean Semiconductor Research Consortium

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

https://iopscience.iop.org/article/10.35848/1347-4065/ac1a8d/pdf

Reference45 articles.

1. 1-T Capacitorless DRAM using bandgap-engineered silicon-germanium bipolar I-MOS;Lahgere;IEEE Trans. Electron Devices,2017

2. 1T Capacitor-Less DRAM cell based on asymmetric tunnel FET design;Biswas;IEEE J. Electron Devices Soc.,2015

3. Doping dependent assessment of accumulation mode and junctionless FET for 1T DRAM;Ansari;IEEE Trans. Electron Devices,2018

4. High retention with n-oxide-p junctionless architecture for 1T DRAM;Ansari;IEEE Trans. Electron Devices,2018

5. Improved retention time in twin gate 1T DRAM with tunneling based read mechanism;Navlakha;IEEE Electron Device Lett.,2016

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Disturbance Characteristics of 1T DRAM Arrays Consisting of Feedback Field-Effect Transistors;Micromachines;2023-05-28

2. Temperature-Dependent Electrical Characteristics of p-Channel Mode Feedback Field-Effect Transistors;IEEE Access;2022

3. Predominance of Carrier Diffusion in Determination of Data Retention in One-transistor Dynamic Random-access Memory;JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE;2021-12-31

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