Abstract
Abstract
A feedback field-effect transistor takes advantage of the charges accumulated in its potential well and the restriction of carrier flow by its internal potential barrier to achieve superior electrical properties such as a subthreshold swing, threshold voltage, transconductance, and on/off current ratio. However, the device must deal with the modulation of non-uniformity under forward/reverse bias and with completely losing carrier flow control during reverse bias below a certain channel length. In this work, we address these significant issues by focusing on the width of the source/drain and demonstrate the operation of positive feedback in n-type metal oxide semiconductor field-effect transistor (nMOSFET) using only one additional step, resulting in a superior subthreshold swing (∼3 mV/decade at 300 K), a low threshold voltage (∼0.26 V), hysteresis window (0.018 V), and clear saturation region.
Funder
National Research Foundation of Korea
IC Design Education Center
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献