Investigation of switching and inverter characteristics of Recessed-Source/Drain (Re–S/D) Silicon-on-Insulator (SOI) Feedback Field Effect Transistor (FBFET)-Reference-Cited by-同舟云学术

Investigation of switching and inverter characteristics of Recessed-Source/Drain (Re–S/D) Silicon-on-Insulator (SOI) Feedback Field Effect Transistor (FBFET)

Published:2023-08 Issue: Volume:138 Page:105855
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Suddarsi Sasi Kiran,Dhanaraj K.J.,Saramekala Gopi Krishna^ORCID

Publisher

Elsevier BV

Subject

General Engineering

Reference22 articles.

1. Silicon CMOS devices beyond scaling;Haensch;IBM J. Res. Dev.,2006

2. CMOS design near the limit of scaling;Taur;IBM J. Res. Dev.,2002

3. On the 60 mV/dec @300 K limit for MOSFET subthreshold swing;Cheung;Proc. 2010 Int. Symp. VLSI Technol. Syst. Appl. VLSI-TSA,2010

4. "Investigation of temperature and source/drain overlap impact on negative capacitance silicon nanotube FET (NC Si NTFET) with sub-60mV/decade switching;Moparthi;IEEE Trans. Nanotechnol.,2020

5. Subthreshold swing characteristics of nanowire tunneling FETs with variation in gate coverage and channel diameter;Kim;Curr. Appl. Phys.,2015

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3. Investigation of the Electrical Coupling Effect for Monolithic 3-Dimensional Nonvolatile Memory Consisting of a Feedback Field-Effect Transistor Using TCAD;Micromachines;2023-09-23