Hole and electron trapping in HfO2/Al2O3 nanolaminated stacks for emerging non-volatile flash memories
Author:
Publisher
IOP Publishing
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering
Link
http://iopscience.iop.org/article/10.1088/1361-6528/aae4d3/pdf
Reference26 articles.
1. Reliability of modified tunneling barriers for high performance nonvolatile charge trap flash memory application
2. Charge trapping properties of the HfO2 layer with various thicknesses for charge trap flash memory applications
3. Performance enhancement of multilevel cell nonvolatile memory by using a bandgap engineered high-κ trapping layer
4. The effect of thermal treatment induced inter-diffusion at the interfaces on the charge trapping performance of HfO2/Al2O3 nanolaminate-based memory devices
5. Impact of the interfaces in the charge trap layer on the storage characteristics of ZrO2/Al2O3 nanolaminate-based charge trap flash memory cells
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1. Layer‐Engineered Functional Multilayer Thin‐Film Structures and Interfaces through Atomic and Molecular Layer Deposition;Advanced Materials Interfaces;2024-06-28
2. Characterization of program and erase speed of memory capacitors with nanolaminated HfO2/Al2O3 stacks for application in non-volatile memories;Journal of Physics: Conference Series;2024-02-01
3. Rapid thermal processing induced interfacial diffusion and solid reaction in the Al2O3/ZnO nano-laminates films;Ceramics International;2024-02
4. Characterization of the Electric Breakdowns in Metal-Insulator-Silicon Capacitor Structures with HfO2/Al2O3 Layers for Non-Volatile Memory Applications;2023 IEEE 33rd International Conference on Microelectronics (MIEL);2023-10-16
5. Challenges to Optimize Charge Trapping Non-Volatile Flash Memory Cells: A Case Study of HfO2/Al2O3 Nanolaminated Stacks;Nanomaterials;2023-08-30
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