Characterization of the Electric Breakdowns in Metal-Insulator-Silicon Capacitor Structures with HfO2/Al2O3 Layers for Non-Volatile Memory Applications-Reference-Cited by-同舟云学术

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Characterization of the Electric Breakdowns in Metal-Insulator-Silicon Capacitor Structures with HfO₂/Al₂O₃ Layers for Non-Volatile Memory Applications

Published:2023-10-16 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE 33rd International Conference on Microelectronics (MIEL)
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Author:

Spassov D.¹,Paskaleva A.¹,Guziewicz E.²,Ivanov Tz.¹,Stanchev T.¹,Davidović V.³,Veljković S.³,Mitrović N.³,Danković D.³

Affiliation:

1. Bulgarian Academy of Sciences,Institute of Solid State Physics,Sofia,Bulgaria,1784

2. Polish Academy of Sciences,Institute of Physics,Warsaw,Poland,02-668

3. University of Niš,Faculty of Electronic Engineering,Niš,Serbia,18000

Funder

Bulgarian National Science Fund

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10315714/10315787/10315813.pdf?arnumber=10315813

Reference12 articles.

1. Charge Storage and Reliability Characteristics of Nonvolatile Memory Capacitors with HfO2/Al2O3-Based Charge Trapping Layers

2. Hole and electron trapping in HfO2/Al2O3 nanolaminated stacks for emerging non-volatile flash memories

3. Electron Trap Profiling Near $\hbox{Al}_{2} \hbox{O}_{3}$/Gate Interface in TANOS Stack Using Gate-Side Trap Spectroscopy by Charge Injection and Sensing

4. Procedure for the Wafer-Level Testing of Thin Dielectrics;JEDEC Solid State Technol Assoc,2001

5. Charge trapping properties of the HfO2 layer with various thicknesses for charge trap flash memory applications

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