The Difficulty and Solution of Mg-doped in GaN

Abstract

Abstract GaN could be the representative third generation semiconductors, it becomes a significant material in the optoelectronic and microelectronic devices. However, the production of atomic H dramatically increases the resistance of Mg-doped GaN Large amount of Mg-H complex are produced during the MOCVD process, dramatically reducing the performance of Mg-doped GaN. Low-Energy Electron Beam Irradiation (LEEBI) could eliminate surface H+ and thus reduce the resistance. Furthermore, Rapid Thermal Annealing (RTA) could decompose Mg-H complex, increasing the concentration of hole. By studying and improving every method, the electrical properties and optical properties are still not enough. Finally, the research points out the future direction of improving the performance of Mg-doped GaN.