Nature of the 2.8 eV photoluminescence band in Mg doped GaN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.120983
Reference18 articles.
1. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
2. Thermal Annealing Effects on P-Type Mg-Doped GaN Films
3. Hole Compensation Mechanism of P-Type GaN Films
4. Characterization of OMVPE-Grown AlGaInN Heterostructures
5. Theory of Point Defects and Complexes in GaN
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