1. Spontaneous emission of localized excitons in InGaN single and multiquantum well structures
2. Y. Matsuda, K. Uchida, R.K. Hayden, N. Miura, S. Nakamura, Y. Kondo, Y. Arakawa, Extended Abstracts (44th Spring Meeting, 1997), The Japan Society of Applied Physics and Related Societies, p. 178, 28a-D-6 (in Japanese).
3. E. Yamaguchi, Lecture notes for graduate students of Okayama Univ. of Science, 1997 (in Japanese). The present sp3s* formulation for hexagonal semiconductors is a simple extension of the sp3 formulation, first developed by A. Kobayashi, O.F. Sankey, and J.D. Dow, Phys. Rev. B 28 (1983) 946.
4. Quasiparticle band structure of AlN and GaN
5. Theory of Substitutional Deep Traps in Covalent Semiconductors