Theory of Substitutional Deep Traps in Covalent Semiconductors
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.44.810/fulltext
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1. Localized defects in III-V semiconductors
2. Evidence for Radiative Recombination inGaAs1−x Px:N(0.28≲x≲0.45) Involving an Isolated Nitrogen Impurity State Associated with theΓ1Minimum
3. Identification of the defect state associated with a gallium vacancy in GaAs andAlxGa1−xAs
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